RLD03N06CLESM Datasheet | Intersil

RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet July 1999 File Number 3948.5 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to source voltage clamping offers precision control of the circuit voltage when switching inductive loads. The “Logic Level” gate allows this device to be fully biased on with only 5V from gate to source, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. These devices incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. Formerly developmental type TA49028. Features - 0.30A, 60V - rDS(ON) = 6.0Ω - Built in Current Limit ILIMIT 0.140 to 0.210A at 150oC - Built in Voltage Clamp - Temperature pensating PSPICE® Model - 2kV ESD Protected - Controlled Switching Limits EMI and RFI - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Symbol D Ordering Information PART NUMBER RLD03N06CLE RLD03N06CLESM RLP03N06CLE PACKAGE TO-251AA TO-252AA TO-220AB BRAND 03N06C 03N06C 03N06CLE S G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. RLD03N06CLESM9A. Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE)...